FODM217DR2 1 Channel integrated circuits transistor output optocouplers 4 PIN TRANSISTOR OUTPUT MFP SR2835ESKG

The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm

Features

• Current Transfer Ratio Ranges from 20 to 600% at IF = ±1 mA, VCE = 5 V, TA = 25°C

♦ FODM214 − 20 to 400%

♦ FODM214A − 50 to 250% at IF = 5 mA, VCE = 5 V, TA = 25°C

♦ FODM217A − 80 to 160%

♦ FODM217B − 130 to 260%

♦ FODM217C − 200 to 400%

♦ FODM217D − 300 to 600%

• Safety and Regulatory Approvals:

♦ UL1577, 3750 VACRMS for 1 min

♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

• Applicable to Infrared Ray Reflow, 260°C Typical Applications

• Primarily Suited for DC−DC Converters

• For Ground Loop Isolation, Signal to Noise Isolation

• Communications – Adapters, Chargers

• Consumer – Appliances, Set Top Boxes

• Industrial – Power Supplies, Motor Control, Programmable Logic Control

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