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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

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IPG20N06S4L14AATMA1 Power Transistor N Channel MOSFET 40V 60V

OptiMOS-T2 Power-Transistor

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	13.7 mOhms
Vgs - Gate-Source Voltage:	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Configuration:	Dual
Height:	1.27 mm
Length:	5.9 mm
Product Type:	MOSFET
Factory Pack Quantity:	5000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Width:	5.15 mm
Part # Aliases:	IPG20N06S4L-14A SP001023846

Product Tags:

IPG20N06S4L14AATMA1 Power Transistor

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